Electronic structure of filled tetrahedral semiconductors
نویسندگان
چکیده
منابع مشابه
Temperature dependence of the electronic structure of semiconductors and insulators.
The renormalization of electronic eigenenergies due to electron-phonon coupling (temperature dependence and zero-point motion effect) is sizable in many materials with light atoms. This effect, often neglected in ab initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of t...
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Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by expansion which is rather peculiar; in all cases the direct gap at Γ point closes on expansion and thereafter a zerogap state persists over a wide range of lat...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1985
ISSN: 0163-1829
DOI: 10.1103/physrevb.31.2570